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| DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLT52 UHF power transistor Product specification Supersedes data of 1997 Oct 15 1998 Jan 28 Philips Semiconductors Product specification UHF power transistor FEATURES * Emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Common emitter class-B operation in portable radio transmitters in the 470 MHz communication band. handbook, halfpage BLT52 PINNING PIN 1, 4, 5, 8 2, 3 6, 7 emitter base collector DESCRIPTION 8 5 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb 60 C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) 7.5 CW, class-B 470 6 3 PL (W) 7 Gp (dB) 8 typ. 9.5 8 typ. 9.5 C (%) 50 typ. 65 50 typ. 55 1998 Jan 28 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb 60 C CONDITIONS open emitter open base open collector - - - - - -65 - MIN. MAX. 20 10 3 2.5 13 +150 200 BLT52 UNIT V V V A W C C THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Ptot = 13 W; Tmb 60 C VALUE 8 UNIT K/W MGM485 handbook, halfpage 10 IC (A) 1 10-1 1 10 VCE (V) 102 Tmb = 60 C. Fig.2 DC SOAR. 1998 Jan 28 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 20 mA open base; IC = 40 mA open collector; IE = 4 mA VBE = 0; VCE = 7.5 V IC = 1.2 A; VCE = 5 V IE = ie = 0; VCB = 7.5 V; f = 1 MHz IC = 0; VCE = 7.5 V; f = 1 MHz MIN. 20 10 3 - 25 - - TYP. - - - - - 24 17 BLT52 MAX. - - - 1 - - - UNIT V V V mA pF pF MGM486 MGM487 handbook, halfpage 100 handbook, halfpage 50 hFE 80 Cc (pF) 40 60 30 40 20 20 10 0 0 0.4 0.8 1.2 1.6 2.0 IC (mA) 0 0 4 8 12 16 20 VCB (V) VCE = 5 V; Tj = 25 C. Measured under pulse conditions: tp 300 s; 0.001. IE = ie = 0; f = 1 MHz; Tj = 25 C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector capacitance as a function of collector-base voltage; typical values. 1998 Jan 28 4 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION RF performance at Tmb 60 C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) 7.5 CW, class-B 470 6 3 PL (W) 7 Gp (dB) 8 typ. 9.5 8 typ. 9.5 BLT52 C (%) 50 typ. 65 50 typ. 55 Ruggedness in class-B operation The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: CW, class-B operation; f = 470 MHz; VCE = 9 V and PL = 7 W; Tmb 60 C. handbook, halfpage 10 MBK250 MGD257 Gp (dB) 8 Gp 100 C (%) 80 handbook, halfpage 10 PL (W) 8 6 C 60 6 4 40 4 2 20 2 0 0 2 4 6 PL (W) 8 0 0 0 1 2 PIN (W) 3 CW, class-B operation; f = 470 MHz; VCE = 6 V; tuned at PL = 3 W; Tmb 60 C. CW, class-B operation; f = 470 MHz; VCE = 6 V; tuned at PL = 3 W; Tmb 60 C. Fig.5 Power gain and collector efficiency as functions of load power; typical values. Fig.6 Load power as a function of input power; typical values. 1998 Jan 28 5 Philips Semiconductors Product specification UHF power transistor BLT52 handbook, halfpage 12 Gp (dB) 10 MBK251 MGD259 Gp 80 C (%) 70 handbook, halfpage 10 PL (W) 8 8 C 60 6 50 4 6 4 40 2 2 30 0 0 2 4 6 8 PL (W) 20 10 0 0 0.5 1.0 1.5 PIN (W) 2.0 CW, class-B operation; f = 470 MHz; VCE = 7.5 V; tuned at PL = 7 W; Tmb 60 C. CW, class-B operation; f = 470 MHz; VCE = 7.5 V; tuned at PL = 7 W; Tmb 60 C. Fig.7 Power gain and collector efficiency as functions of load power; typical values. Fig.8 Load power as a function of input power; typical values. handbook, halfpage 20 MBK252 Gp (dB) handbook, halfpage 16 MBK253 Gp (dB) 12 16 12 8 8 4 4 0 100 150 200 250 300 f (MHz) 0 400 420 440 460 480 f (MHz) CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb 60 C. CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb 60 C. Fig.9 Power gain as a function of frequency; typical values. Fig.10 Power gain as a function of frequency; typical values. 1998 Jan 28 6 Philips Semiconductors Product specification UHF power transistor BLT52 handbook, halfpage 4 MBK254 Zi () handbook, halfpage 6 MBK255 ZL () 2 ri 4 RL 0 2 -2 xi -4 0 XL -6 100 150 200 250 300 f (MHz) -2 100 150 200 250 300 f (MHz) CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb 60 C. CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb 60 C. Fig.11 Input impedance as a function of frequency (series components); typical values. Fig.12 Load impedance as a function of frequency (series components); typical values. MGD260 MGD261 handbook, halfpage 1.2 handbook, halfpage 4 Zi () ri 0.8 xi ZL () 3 RL 2 0.4 1 XL 0 400 420 440 460 f (MHz) 480 0 400 420 440 460 480 f (MHz) CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb 60 C. CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb 60 C. Fig.13 Input impedance as a function of frequency (series components); typical values. Fig.14 Load impedance as a function of frequency (series components); typical values. 1998 Jan 28 7 Philips Semiconductors Product specification UHF power transistor MOUNTING RECOMMENDATIONS BLT52 Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board. full pagewidth 1.87 (2x) 0.60 (4x) 0.80 (2x) 0.50 (12x) 7.38 3.60 1.00 (8x) 1.00 (9x) 4.60 MGK390 Dimensions in mm. Fig.15 Reflow soldering footprint for SOT409A. 1998 Jan 28 8 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Ceramic surface mounted package; 8 leads BLT52 SOT409A D A D2 B H1 w2 B L c H E2 E A e b w1 Q1 0 2.5 scale 5 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.36 2.06 0.093 0.081 b 0.58 0.43 0.023 0.017 c 0.23 0.18 0.009 0.007 D 5.94 5.03 0.234 0.198 D2 5.16 5.00 0.203 0.197 E 4.93 4.01 0.194 0.158 E2 4.14 3.99 0.163 0.157 e 1.27 0.050 H 7.47 7.26 0.294 0.286 H1 4.39 4.24 0.173 0.167 L 1.02 0.51 0.040 0.020 Q1 0.10 0.00 0.004 0.000 w1 0.25 0.010 w2 0.25 0.010 7 0 7 0 OUTLINE VERSION SOT409A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28 1998 Jan 28 9 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLT52 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jan 28 10 Philips Semiconductors Product specification UHF power transistor NOTES BLT52 1998 Jan 28 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 Internet: http://www.semiconductors.philips.com SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125108/00/03/pp12 Date of release: 1998 Jan 28 Document order number: 9397 750 03238 |
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